A Monolithically Integrated SiC Circuit Breaker

In this letter, a monolithically integrated SiC circuit breaker device providing self-triggered blocking operation is presented. The proposed topology implemented into common 4H-SiC JFET technology, which offers conventional cell design and chip scaling opportunities. Basic implications are discussed on the basis of quasi-static electrical measurements fabricated nJFET, pJFET devices. experiment including variation channel length doping dose reveals distinct effect targets, especially on-state resistance, trigger current voltage. investigated devices exhibit density levels up to 2.8 A/cm 2 self-sustained capability 795 V DC-link On-state resistance at room temperature determined 0.93 $\Omega $ cm but drastically decreases elevated temperatures, as shown in experiments.